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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV48B DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 600V (Min) *High Current Capability *Fast Switching Speed APPLICATIONS *Designed for switching and industrial applications from single and three-phase mains. Absolute maximum ratings(Ta=25) SYMBOL VCER VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage (RBE= 10) Collector-Emitter Voltage (VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak tp< 5ms Base Current-Continuous Base Current-peak tp< 5ms Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 1200 1200 600 7 15 30 4 20 125 150 -65~150 UNIT V V V V A A A A W IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCER(SUS) VCE(sat)-1 VCE (sat)-2 VBE(sat)-1 VBE(sat)-2 ICER ICES ICEO IEBO PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current CONDITIONS IC= 100mA; IB= 0 IC= 0.5A; L= 2mH; Vclamp= 1200V RBE= 10 IC= 6A; IB= 1.5A B BUV48B MIN 600 1200 MAX UNIT V V 1.5 3.0 1.5 2.0 0.5 4.0 0.5 3.0 1.0 1.0 V V V V mA mA mA mA IC= 10A; IB= 4A IC= 6A; IB= 1.5A B IC= 10A; IB= 4A VCE= 1200V; RBE= 10 VCE= 1200V; RBE= 10; TC=125 VCE= 1200V; VBE= 0 VCE= 1200V; VBE= 0; TC=125 VCE= 600V; IB= 0 VEB= 6V; IC= 0 Switching times Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 6A; IB1=-IB2= 1.5A; VCC= 250V 1.0 3.0 0.7 s s s isc Websitewww.iscsemi.cn |
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